PART |
Description |
Maker |
CY7C1303BV18-100BZC CY7C1306BV18-100BZC CY7C1303BV |
18-Mbit Burst of 2 Pipelined SRAM with QD(TM) Architecture 18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture 18-Mbit Burst of 2 Pipelined SRAM with QDR垄芒 Architecture 18-Mbit Burst of 2 Pipelined SRAM with QDR?Architecture
|
Cypress Semiconductor
|
CAT64LC20ZS CAT64LC20ZP CAT64LC20J-TE7 CAT64LC20J- |
36-Mbit QDR-II SRAM 4-Word Burst Architecture 36-Mbit QDR-II SRAM 2-Word Burst Architecture 9-Mbit (256K x 36/512K x 18) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Pipelined SRAM with NoBL Architecture 4-Mbit (128K x 36) Flow-through SRAM with NoBL Architecture 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM with NoBL Architecture SPI Serial EEPROM SPI串行EEPROM 36-Mbit QDR™-II SRAM 2-Word Burst Architecture SPI串行EEPROM 18-Mbit (512K x 36/1M x 18) Flow-Through SRAM SPI串行EEPROM 256K (32K x 8) Static RAM SPI串行EEPROM
|
Analog Devices, Inc. Electronic Theatre Controls, Inc.
|
CY7C1305BV18-167BZC CY7C1307BV18-167BZC CY7C1305BV |
18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor
|
CY7C1303BV25-167BZC CY7C1306BV25-167BZC CY7C1303BV |
18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor
|
CY7C1302DV25 CY7C1302DV25-167 CY7C1302DV25-100 CY7 |
9-Mbit Burst of Two Pipelined SRAMs with QDR(TM) Architecture 9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture
|
CYPRESS[Cypress Semiconductor]
|
CY7C1303CV25-167BZC CY7C1306CV25-167BZC CY7C1306CV |
18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture
|
Cypress Semiconductor
|
K7A203600 K7A203600A K7A203600B-QCI14 |
64K x 36-Bit Synchronous Pipelined Burst SRAM Rev. 2.0 (Dec. 1999) 64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
|
CY7C1352F CY7C1352F-100AC CY7C1352F-100AI CY7C1352 |
4-Mbit (256Kx18) Pipelined SRAM with NoBLArchitecture 256K X 18 ZBT SRAM, 2.8 ns, PQFP100 4-Mbit (256Kx18) Pipelined SRAM with NoBL(TM) Architecture 4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture 4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
|
M36P0R9060E0 M36P0R9060E0ZACE M36P0R9060E0ZACF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash memory 64 Mbit (Burst) PSRAM, 1.8V supply, Multi-Chip Package
|
STMicroelectronics
|
M36W0R6040B3ZAQE M36W0R6050B3 M36W0R6050B3ZAQE M36 |
64-Mbit (4 Mbits ×16, multiple bank, burst) Flash memory and 16-Mbit (1 Mbit ×16) or 32-Mbit (2 Mbits x16) PSRAM MCP
|
Numonyx B.V http://
|
CY7C1305AV18 CY7C1305AV18-100BZC CY7C1305AV18-133B |
18-Mb Burst of 4 Pipelined SRAM with QDR(TM) Architecture 18-Mb Burst of 4 Pipelined SRAM with QDR⑩ Architecture
|
Cypress Semiconductor
|
CY7C1472BV25-167BZXC CY7C1472BV25-167BZXI CY7C1472 |
2M X 36 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL垄芒 Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture
|
CYPRESS SEMICONDUCTOR CORP
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